Observation of surface defects using a scanning tunneling microscope(STM).
نویسندگان
چکیده
منابع مشابه
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
The scanning tunneling microscope is used to study arsenic-related point defects in low-temperaturegrown GaAs. Tunneling spectroscopy reveals a band of donor states located near E„+0. 5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 A from the core. The structure of the defect is found to be consistent with that of an isolate...
متن کاملThe observation of oxygen disorder on the V,O,( 001) surface using scanning tunneling microscopy
Constant current scanning tunneling microscope images of the V,O,(OOl) surface were recorded in ultrahigh vacuum (UHV). The conductivity of the V,O, crystal was increased by doping with NaOduring the crystal growth and flat surfaces were created by cleavage in N, or UHV. All images exhibit the 11.5 A X 3.65 A periodicity expected for a bulk terminated surface. However, images from different are...
متن کاملScanning Tunneling Microscopy Observation of Phonon Condensate
Using quantum tunneling of electrons into vibrating surface atoms, phonon oscillations can be observed on the atomic scale. Phonon interference patterns with unusually large signal amplitudes have been revealed by scanning tunneling microscopy in intercalated van der Waals heterostructures. Our results show that the effective radius of these phonon quasi-bound states, the real-space distributio...
متن کاملScanning Tunneling Microscopy of Surface Structures
Surface science got a new impact with the development of the seanning tunneling microscope, since for the first time atomic-resolution observations of surface structures in real space have becomepossible. Following ashort description of the basic features of the seanning tunneling microscopy, some selected results are presented which illustrate the potential of the technique to provide informat...
متن کاملScanning tunneling microscopy observation of surface superstructures during the growth of In on In/Si(111) surface
a Department of Physics and Shanghai Jiao Tong University, 200240 Shanghai, China b Institute of Applied Physics, CREST-JST, University of Tsukuba, 305-8573 Tsukuba, Japan c Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, 200093 Shanghai, China d Department of Physics, Tsinghua University, 100084 Beijing, China e Research Institute of Micro/N...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1989
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.10.156